Maximum Ratings
(at TA=25°Cunless otherwise noted)
Parameter
Symbol
101-HF
Unit
Repetitive peak reverse voltage
RMS voltage
Continuous reverse voltage
Maximum Forward rectified current
Maximum forward voltage @IF= 1.0A
Maximum Forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC method)
Reverse current
VR=VRRM
@T
A=100 °C
Maximum Reverse recovery time (note 1)
Typical Diode junction capacitance
Operating junction temperature
Storage temperature range
V
oltage: 50 to 1000 Volts
Current: 1.0
A
RoHS Device
Dimensions
in
inches
and
(millimeter)
Features
-Batch process design,excellent power dissipation of
fers
better reverse leakage current and thermal resistance.
-T
iny plastic SMD package.
-Fast switching for high ef
ficiency.
-Glass passivated chip junction.
Mechanical data
-Case: Molded plastic, SOD-123/Mini SMA.
-T
erminals: Solder plated, solderable per MIL-STD-
750, method 2026.
-Polarity: Indicated by cathode band.
-W
eight: 0.018 grams approx.
CFRM101-HF Thru. CFRM107-HF
Page 1
QW-JF001
SMD Fast Recovery Rectifiers
REV:A
Comchip Technology CO., LTD.
Mini SMA
0.154(3.9)
0.138(3.5)
0.012(0.3) Typ.
0.075(1.9)
0.059(1.5)
0.067(1.7)
0.051(1.3)
0.028(0.7) Typ.
0.028(0.7) Typ.
VRRM
VRMS
VR
IO
VF
IFSM
IR
trr
RθJA
CJ
TJ
TSTG
CFRM
CFRM
102-HF
CFRM
103-HF
CFRM
104-HF
CFRM
105-HF
CFRM
106-HF
CFRM
107-HF
50
35
50
100
70
100
200
140
200
400
280
400
1.0
1.3
30
5.0
100
42
15
-55 to +150
-65 to +175
600
420
600
800
560
800
1000
700
1000
V
V
V
A
V
A
μA
nS
OC/W
pF
OC
OC
150
250
500
VR=VRRM
@T
A= 25 °C
Note 1. Reverse recovery time test condition , IF=0.5A, IR=1.0A,
IRR=0.25A
f=1MHz and applied 4V DC reverse voltage
Typical Thermal resistance
(Junction to ambient )
-Low Profile surface mounted application in order to
optimize board space.
-High current capability
.
-High surge current capability
.
Halogen Free
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